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| DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes FEATURES * Low switching losses * Fast recovery time * Guard ring protected * Hermetically sealed leaded glass package. APPLICATIONS * Low power, switched-mode power supplies * Rectifying * Polarity protection. handbook, 4 columns 1N5817; 1N5818; 1N5819 DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol. 1996 May 03 2 Philips Semiconductors Product specification Schottky barrier diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR 1N5817 1N5818 1N5819 VRSM non-repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRRM repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRWM crest working reverse voltage 1N5817 1N5818 1N5819 IF(AV) IFSM average forward current non-repetitive peak forward current PARAMETER continuous reverse voltage 1N5817; 1N5818; 1N5819 CONDITIONS - - - - - - - - - - - - Tamb = 55 C; Rth j-a = 100 K/W; note 1; VR(equiv) = 0.2 V; note 2 t = 8.3 ms half sine wave; JEDEC method; Tj = Tj max prior to surge: VR = 0 - - MIN. MAX. 20 30 40 24 36 48 20 30 40 20 30 40 1 25 V V V V V V V V V V V V A A UNIT Tstg Tj Notes storage temperature junction temperature -65 - +175 125 C C 1. Refer to SOD81 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 1996 May 03 3 Philips Semiconductors Product specification Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage 1N5817 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A VF forward voltage 1N5818 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A VF forward voltage 1N5819 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A IR Cd reverse current diode capacitance 1N5817 1N5818 1N5819 Note 1. Pulsed test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD81 standard mounting conditions. PARAMETER thermal resistance from junction to ambient VR = VRRMmax; note 1 VR = VRRMmax; Tj = 100 C VR = 4 V; f = 1 MHz CONDITIONS 1N5817; 1N5818; 1N5819 MIN. - - - - - - - - - - - - - - - - - - - - - - - - - TYP. MAX. 320 450 750 330 550 875 340 600 900 1 10 - - - UNIT mV mV mV mV mV mV mV mV mV mA mA pF pF pF 80 50 50 CONDITIONS note 1 VALUE 100 UNIT K/W 1996 May 03 4 Philips Semiconductors Product specification Schottky barrier diodes GRAPHICAL DATA 1N5817; 1N5818; 1N5819 handbook, halfpage 5 MBE634 IF (A) 4 Tj = 125 oC 25 oC 3 2 1 0 0 0.5 VF (V) 1 Fig.2 Typical forward voltage. 1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1 MBE642 0.5 0 0 0.5 1 1.5 IF(AV) (A) 2 Fig.3 1N817. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 5 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1 MBE641 0.5 0 0 0.5 1 1.5 IF(AV) (A) 2 Fig.4 1N5818. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1 MBE643 0.5 0 0 0.5 1 1.5 IF(AV) (A) 2 Fig.5 1N5819. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 6 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 handbook, halfpage 200 MBG434 handbook, halfpage 0.20 MBG435 Tj (oC) 150 VRWM = 0.2 PR (W) 0.15 VR VRWM = 0.5 VRWM = 0.2 100 VR VRWM = 0.5 0.10 50 0.05 0 0 10 VR (V) 20 0 0 10 VR (V) 20 Fig.6 1N5817. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. Fig.7 1N5817. Reverse power dissipation as a function of reverse voltage (max. values); Rth j-a = 100 K/W. handbook, halfpage 200 MBG432 handbook, halfpage 0.20 MBG437 ( oC) Tj PR (W) VRWM = 0.2 0.15 VR VRWM = 0.5 VRWM = 0.2 150 100 VR 0.10 VRWM = 0.5 50 0.05 0 0 10 20 VR (V) 30 0 0 10 20 VR (V) 30 Fig.8 1N5818. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. 7 Fig.9 1N5818. Reverse power dissipation as a function of reverse voltage (max. values); Rth j-a = 100 K/W. 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 handbook, halfpage 200 MBG433 handbook, halfpage 0.20 MBG436 Tj (oC) 150 VRWM = 0.2 PR (W) 0.15 VR VRWM = 0.5 VRWM = 0.2 100 VR 0.10 VRWM = 0.5 50 0.05 0 0 10 20 30 V (V) 40 R 0 0 10 20 30 V (V) 40 R Fig.10 1N5819. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. Fig.11 1N5819. Reverse power dissipation as a function of reverse voltage (max. values); Rth j-a = 100 K/W. 1996 May 03 8 Philips Semiconductors Product specification Schottky barrier diodes PACKAGE OUTLINE 1N5817; 1N5818; 1N5819 handbook, full pagewidth 5 max 0.81 max 2.15 max MBC051 28 min 3.8 max 28 min Dimensions in mm. Fig.12 SOD81. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 May 03 9 |
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